| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BC847S KC847S |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|
| DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| X4165S8 X4163 X4165V8I-2.7A X4165V8-2.7A X4163S8-4 |
CPU Supervisor with 16K EEPROM 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
IGBT Module; Continuous Collector Current, Ic:75A; Collector Emitter Saturation Voltage, Vce(sat):3V; Collector Emitter Voltage, Vceo:1200V; Leaded Process Compatible:Yes; Package/Case:D61; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CPU Supervisor with 16K EEPROM
|
Intersil, Corp.
http://
Intersil Corporation
|
| 2SD1624 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| BCV61C BCV61A |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| SMBT390608 MMBT3906 SMBT3906S SMBT3906U |
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
